r19ds0079ej0400 rev.4.00 page 1 of 7 dec 13, 2014 data sheet r2a20112sp/dd critical conduction mode interleaved pfc control ic description the r2a20112 controls a boost converter to provide an active powe r factor correction. the r2a20112 adopts critical conduction mode for power f actor correction and realizes high efficiency and a low switching noise by zero current switching. interleaving function improve ripple current on input or output capacitor by 180 degrees phase shift. the feedback loop open detection, two mode overvoltage protection, overcurrent protection are built in the r2a20112, and can constitute a power supply system of high reliability with few external parts. features ? maximum ratings ? supply voltage vcc: 24 v ? operating junction temperature tjopr: ?40 to +150c ? electrical characteristics ? vref output voltage vref: 5.0 v 3% ? uvlo operation start voltage vh: 10.5 v 0.7 v ? uvlo operation shutdown voltage vl: 9.3 v 0.5 v ? uvlo hysteresis voltage hysuvl: 1.2 v 0.5 v ? functions ? boost converter control with critical conduction mode ? interleaving control ? two mode overvoltage protection mode1: dynamic ovp corresponding to a voltage rise by load change mode2: static ovp corresponding to overvoltage in stable ? feedback loop open detection ? master and slave independ ence overcurrent protection ? 280 s restart timer ? package lineup: pb-free sop-16/dilp-16* note: * not recommend for new design. ordering information part no. package name package code taping spec. R2A20112SPW0 fp-16dav prsp0016dh-b 2000 pcs./one taping product r2a20112ddu0 * dp-16fv prdp0016ae-b ? note: * not recommend for new design. r19ds0079ej0400 rev.4.00 dec 13, 2014
r2a20112sp/dd r19ds0079ej0400 rev.4.00 page 2 of 7 dec 13, 2014 pin arrangement zcd-s zcd-m vcc pgnd gd-s sgnd (top view) 1 8 7 6 5 4 3 2 16 9 10 11 12 13 14 15 fb comp nc rt nc ramp vref gd-m ocp-m ocp-s pin functions pin no. pin name input/output function 1 zcd-m input master converter zero current detection input terminal 2 zcd-s input slave converter zero current detection input terminal 3 n.c. ? open 4 vref output reference voltage output terminal 5 sgnd ? ground for small signal circuit 6 rt input/output oscillator frequency setting terminal 7 ramp input/output ramp waveform setting terminal 8 comp output error amplifier output terminal 9 fb input error amplifier input terminal 10 ocp-s input slave converter overcurrent detection terminal 11 ocp-m input master converter overcurrent detection terminal 12 n.c. ? open 13 gd-s output slave converter power mosfet drive terminal 14 pgnd ? ground for power stage 15 gd-m output master converter power mosfet drive terminal 16 vcc input supply voltage terminal
r2a20112sp/dd r19ds0079ej0400 rev.4.00 page 3 of 7 dec 13, 2014 block diagram fb + ? nc fb rt osc 0.8v ~ 6.4v clamp vzcd_lo = 1.5 v 300 mvhys + ? + ? + ? + ? 0.8v ~ 6.4v clamp vzcd_lo = 1.5 v 300 mvhys zcd-m zcd-s slave control vref: 5 v uvlo on: 10.5 v off: 9.3 v 0.92 v vcc iramp gd disable comp discharge ovp block ocp-m + ? ocp-s 0.3 v ocp-m ocp-s nc gd-s pgnd gd-m vcc 2.5 v 9.1 v error amp ocp comp1 ocp comp2 vref sgnd ramp comp logic
r2a20112sp/dd r19ds0079ej0400 rev.4.00 page 4 of 7 dec 13, 2014 absolute maximum ratings (ta = 25c) item symbol ratings unit note supply voltage vcc ?0.3 to 24 v gd-m peak current ipk-gdm 200 ma 3 gd-m dc current idc-gdm 10 ma gd-s peak current ipk-gds 200 ma 3 gd-s dc current idc-gds 10 ma zcd terminal current izcd 10 ma rt terminal current irt ?200 a vref terminal current iref ?5 ma comp terminal current icomp 1 ma terminal voltage vt-group1 ?0.3 to vcc v 4 vt-group2 ?0.3 to vref v 5 vref terminal voltage vt-ref ?0.3 to vref+0.3 v power dissipation pt 1 w 6 operating junction temperature tj-opr ?40 to +150 c storage temperature tstg ?55 to +150 c notes: 1. rated voltages are with reference to the sgnd terminal. 2. for rated currents, inflow to the ic is indicated by (+), and outflow by (?). 3. shows the transient current when driving a capacitive load. 4. this is the rated voltage for the following pins: ramp, fb 5. this is the rated voltage for the following pins: rt, ocp-m , ocp-s 6. in case of r2a20112dd (dilp): ja = 120c/w (not recommend for new design) in case of r2a20112sp (sop): ja = 120c/w this value is a thing mounting on 40 40 1.6 [mm], a glass epoxy bo ard of wiring density 10%. electrical characteristics (ta = 25c, vcc = 12 v, rt = 22 k , ocp = gnd, cramp = 68 0 pf, rzcd-gnd = 51 k , fb = comp) item symbol min typ max unit test conditions supply uvlo turn-on threshold vuvlh 9.8 10.5 11.2 v uvlo turn-off threshold vuvll 8.8 9.3 9.8 v uvlo hysteresis hysuvl 0.7 1.2 1.7 v standby current istby ? 120 200 a vcc = 8.9 v, zcd = open operating current icc ? 4.9 7.0 ma vref output voltage vref 4.85 5.00 5.15 v isource = ?1 ma line regulation vref-line ? 5 20 mv isource = ?1 ma, vcc = 10 v to 24 v load regulation vref-load ? 5 20 mv isource = ?1 ma to ?5 ma temperature stability dvref ? 80 ? ppm/c ta = ?40 to 125c * 1 note: 1. design spec.
r2a20112sp/dd r19ds0079ej0400 rev.4.00 page 5 of 7 dec 13, 2014 electrical characteristics (cont.) (ta = 25c, vcc = 12 v, rt = 22 k , ocp = gnd, cramp = 68 0 pf, rzcd-gnd = 51 k , fb = comp) item symbol min typ max unit test conditions error amplifier feedback voltage vfb 2.40 2.50 2.60 v fb-comp short, ramp = 0 v input bias current ifb ?0.5 0 0.5 a measured pin: fb open loop gain av ? 60 ? db *1 upper clamp voltage vclamp-comp 8.0 9.1 10.6 v fb = 2.0 v, comp: open low voltage vl-comp ? 0.1 0.3 v fb = 3.0 v, comp: open source current isrc-comp ? ?120 ? a fb = 1.5 v, comp = 2.5 v sink current 1 isnkcomp1 ? 120 ? a *1 sink current 2 isnkcomp2 ? 300 ? a fb = 3.5 v, comp = 2.5 v transconductance gm 150 200 290 s fb = 2.45 v ? 2.55 v, comp = 2.5 v ramp ramp charge current ic-ramp 130 150 170 a ramp = 0 v to 7 v ramp discharge current id-ramp 7 16 29 ma fb = 1 v, comp = 2 v, ramp = 0 v to 1.5 v to 1 v low voltage vl-ramp ? 17 200 mv fb = 1 v, comp = 3 v, ramp = 0 v to 2.5 v to open isink = 100 a zero current detector upper clamp voltage vzcdh 5.8 6.4 7.0 v isource = ?3 ma lower clamp voltage vzcdl 0.3 0.8 1.3 v isink = 3 ma zcd low threshold voltage vzcd_lo 1.05 1.50 1.75 v *1 zcd hysteresis hyszcd 180 300 390 mv *1 input bias current izcd ?1 ? 1 a 1.2 v < vzcd < 5 v slave control phase delay phase 160 180 200 deg. *1, *2 on time ratio ton-ratio ?5 ? 5 % *1, *2 restart restart time delay tstart 210 280 350 s cramp = 3300 pf fb = 2.0 v, comp = 5 v notes: 1. design spec. 2. gd-m gd-s tperiod (25
r2a20112sp/dd r19ds0079ej0400 rev.4.00 page 6 of 7 dec 13, 2014 electrical characteristics (cont.) (ta = 25c, vcc = 12 v, rt = 22 k , ocp = gnd, cramp = 68 0 pf, rzcd-gnd = 51 k , fb = comp) item symbol min typ max unit test conditions gate drive master gate drive rise time tr-gdm ? 30 100 ns cl = 100 pf, cramp = 3300 pf fb = 2.0 v, comp = 5 v slave gate drive rise time tr-gds ? 30 100 ns cl = 100 pf, cramp = 3300 pf fb = 2.0 v, comp = 5 v master gate drive fall time tf-gdm ? 30 100 ns cl = 100 pf, cramp = 3300 pf fb = 2.0 v, comp = 5 v slave gate drive fall time tf-gds ? 30 100 ns cl = 100 pf, cramp = 3300 pf fb = 2.0 v, comp = 5 v master gate drive low voltage vol1-gdm ? 0.05 0.2 v isink = 2 ma vol2-gdm ? 0.03 0.7 isink = 1 ma, vcc = 5 v master gate drive high voltage voh-gdm 11.5 11.9 ? v isource = ?2 ma slave gate drive low voltage vol1-gds ? 0.05 0.2 v isink = 2 ma vol2-gds ? 0.03 0.7 isink = 1 ma, vcc = 5 v slave gate drive high voltage voh-gds 11.5 11.9 ? v isource = ?2 ma * 1 over current protection ocp threshold voltage vocp 0.27 0.3 0.33 v over voltage protection dynamic ovp threshold voltage vdovp vfb 1.035 vfb 1.050 vfb 1.065 v static ovp threshold voltage vsovp vfb 1.075 vfb 1.090 vfb 1.105 v comp = open static ovp hysteresis hys-so vp 50 100 150 mv comp = open fb open detect threshold voltage vfbopen 0.45 0.50 0.55 v comp = open fb open detect hysteresis hysfbopen 0.16 0.20 0.24 v comp = open note: 1. design spec.
r2a20112sp/dd r19ds0079ej0400 rev.4.00 page 7 of 7 dec 13, 2014 package dimensions 0.80 0.15 1.27 7.50 8.00 0.400.34 a 1 10.5 max nommin dimension in millimeters symbol reference 2.20 0.900.700.50 5.50 0.200.100.00 0.46 0.250.200.15 7.80 8 0 0.12 1.15 10.06 l 1 z h e y x c b p a 2 e d b 1 c 1 e l a *1 *2 e 8 1 16 9 xm p *3 y f index mark b d e h z a terminal cross section ( ni/pd/au plating ) p c b 1 1 detail f l l a note) 1. dimensions"*1 (nom)"and"*2" do not include mold flash. 2. dimension"*3"does not include trim offset. e p-sop16-5.5x10.06-1.27 0.24g mass[typ.] fp-16dav prsp0016dh-b renesas code jeita package code previous code 7.62 maxnommin dimension in millimeters symbol reference 19.2 6.3 5.06 a 1 z b 3 d e a b p c e l e 1 0.51 0.56 1.30 0.19 0.25 0.31 2.29 2.54 2.79 0 15 20.32 7.4 0.40 0.48 1.12 2.54 1 p 1 3 1 8 16 9 e b a l a z e c e d b 0.89 ( ni/pd/au plating ) p-dip16-6.3x19.2-2.54 1.05g mass[typ.] dp-16fv prdp0016ae-b renesas code jeita package code previous code
notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information incl uded herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". t he recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti-crime systems; and safety equipment etc. renesas electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat t o human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). you mus t check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application for which it is not intended. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for which the product is not intended by renesas electronics. 6. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas e lectronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 7. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance desig n. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics produc t, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measu res. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatib ility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, in cluding without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufactu re, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. you should not use renesas electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. when exporting the renesas electronics products or technology described in this do cument, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. it is the responsibility of the buyer or distributor of renesas electronics products, who distributes, disposes of, or othe rwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, renesas electronics assumes no responsibility for any losses incurred by yo u or third parties as a result of unauthorized use of renesas electronics products. 11. this document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of renesa s electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this doc ument or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. http://www.renesas.com refer to "http://www.renesas.com/" for the latest and detailed information. renesas electronics america inc. 2880 scott boulevard santa clara, ca 95050-2554, u.s.a. tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 1101 nicholson road, newmarket, ontario l3y 9c3, canada tel: +1-905-898-5441, fax: +1-905-898-3220 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-651-700, fax: +44-1628-651-804 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 301, tower a, central towers, 555 langao rd., putuo district, shanghai, china tel: +86-21-2226-0888, fax: +86-21-2226-0999 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 80 bendemeer road, unit #06-02 hyflux innovation centre singapore 339949 tel: +65-6213-0200, fax: +65-6213-0300 renesas electronics malaysia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics korea co., ltd. 12f., 234 teheran-ro, gangnam-gu, seoul, 135-080, korea tel: +82-2-558-3737, fax: +82-2-558-5141 sales offices ? 2013 renesas electronics corporation. all rights reserved. colophon 3.0
|
